Research Output | Dar Al-hikmah Library | IIUM Only
In this paper, a characterization and comparison between the effects of Electron irradiation on low noise amplifiers (LNAs) implemented in a Silicon-Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) and Gallium-Arsenide (GaAs) HBT technologies, respectively, was carried out. Previous studies [1] have shown that the properties of SiGe and GaA