Research Output | Dar Al-hikmah Library | IIUM Only
This paper provides the details of a study on the effects of electron irradiation on two Low Noise Amplifiers (LNA), the Gallium-Arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) based and the Silicon-Germanium (SiGe) Heterojunction Bipolar Transistor (HBT)-based. Previous studies have shown that the properties of GaAs and SiG