Research Output | Dar Al-hikmah Library | IIUM Only
An Indium Gallium Arsenide (InGaAs)-based-infrared light emitting diodes (lR-LEDs) chip was numerically analyzed based on different quantum wells (QWs) configurations in heterojunction epi-layers for optimal electro-optics performance. The performance analysis is executed based on carrier concentration, radiative recombination, and electroluminesce