Research Output | Dar Al-hikmah Library | IIUM Only
Nitride-based light emitting diodes (LEDs) is an attractive material due to its high temperature tolerance and suitable to be used in extreme environment. The irradiation process of Gallium Nitride (GaN) diode was carried out by electron irradiation with 1000 kGy and 1500 kGy doses with a conveyor speed of 50 kGy per pass. Capacitance-voltage (C-V)