The oral route is considered the most patient-convenient means of drug administration. In recent years there has been a tendency to employ smart carrier systems that enable controlled or timed release of a bioactive material, thereby providing a better dosing pattern and minimizing side effects. Nano-encapsulation systems (nanocarriers) offer impor

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Beam on an elastic foundation represents many applications like bridges, rail tracks. The analysis of such situation under dynamic loads is of quite importance to industry and researchers as well. Beam on elastic foundation represent a contact problem of the receding type. In this paper, we used a quasi-linear approach integrated with the Finite El

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A low-power quaternary comparator circuit using current-mode CMOS multiple-valued logic (MVL) circuits has been presented in this paper. Existing MVL comparator circuits consume high power. The circuit presented in this paper has been shown low power digital output. It has been simulated with PSPICE using the transistor model parameter values of th

Machining is a regulated material removal process from a piece of raw material which can be divided into mainly two major groups “Conventional Machining Processes” and “Non-Conventional Machining Processes”. Turning, boring, milling, shaping, broaching, slotting, grinding etc fall under the category of conventional machining processes. Simi

Introduction: The objective of this study was to investigate the relationship between hypertensive patients and their coping style and associated lifestyle factors. Methods: A total of 502 participants attending nine outpatient clinics completed the validated Bahasa Malaysia version of the Coping Inventory for Stressful Situations and sociodemograp

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In this paper, a low-power quaternary comparator circuit using current-mode CMOS multiple-valued logic (MVL) circuits has been presented. Existing MVL comparator circuits consume high power. The circuit presented in this paper low power. It has been simulated with PSPICE using the transistor model parameter values of the BSIM3 NMOS model V3.2 for 0