Research Output | Dar Al-hikmah Library | IIUM Only
The impact of fast electron exposure upon the performance of commercial silicon carbide Schottky diodes has been studied. Under 3 MeV electrons, absorbed dose of 10 and 15 MGy at room temperature, the forward current density-voltage characteristic of INFINEON and STMICROELECTRONICS devices have been decreased by 4.6 and 8.2 orders of magnitude resp