Research Output | Dar Al-hikmah Library | IIUM Only
A high dopant concentration significantly reduces the peak current of the internal quantum efficiency (IQE) of the light-emitting diode (LED). The effect of the dopant concentration on the epitaxial layer toward the IQE, current density, and IQE droop of gallium nitride (GaN)-based LED chip is analyzed with the doping variation from 1 × 1015 cm−