Research Output | Dar Al-hikmah Library | IIUM Only
A performance comparison of high-voltage SiC Schottky power diodes from ROHM Co., and CREE, Inc., is reported. The diodes were irradiated by high-energy, 3.0 MeV, electrons within a fluence ranging from 6.6×1015 to 4.95×1016 electron/cm2 . Current density-voltage and capacitance-voltage characterization were used to investigate the impact of the